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Titanium doped sapphire is the most widely used crystal for wavelength tunable lasers. It is also an excellent medium capable of generating ultrashort pulse, high gain and high power lasing. ATOM have successfully produced large-sized (F120´80mm) Ti: sapphire free of light scatter and with dislocation density less than 102cm-2 by using the growth method of Temperature Gradient Technique (TGT). TGT was invented by the scientists in SIOM, which is characterized by the capabilities of growing (0001) oriented sapphire with high doping level (a490=7.5cm-1), high gain, and high laser damage threshold.
Pulsed, quasi-cw, cw, ps and fs lasing with high efficiency have been realized using TGT grown Ti:sapphire. Moreover, TGT grown Ti:sapphire can also meet current applications such as in large aperture amplifiers (diameter up to 50mm) for high power generation and laser fusion etc.